Author/Authors :
Zhang، نويسنده , , Chen and Lechner، نويسنده , , Peter and Lutz، نويسنده , , Gerhard and Porro، نويسنده , , Matteo and Richter، نويسنده , , Rainer and Treis، نويسنده , , Johannes and Strüder، نويسنده , , Lothar and Nan Zhang، نويسنده , , Shuang، نويسنده ,
Abstract :
Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors have been designed for X-ray applications and the prototypes with 1×1 mm2 pixel size have been fabricated. The prototype applies a newly designed DEPFET structure with drain-clear-gate (DCG) as the readout element of a silicon drift detector. Therefore, the size of Macropixel detectors can be adjusted to match the requirement of the instrument on spatial resolution from about 50×50 μm2 to several square millimeters. The measured energy resolution for Mn-Kα peak at room temperature is 191 eV with a prototype single pixel. In this paper we present the DEPFET Macropixel detector concept as well as the static and dynamic test results.
Keywords :
DEPFET , Macropixel , Silicon drift detector , X-ray Astronomy , X-ray spectroscopy
