Fabrication of field effect transistor based on carbon nanotubes

In this work, we present the results in the production of single wall carbon nanotubes and their assembling in a prototype of field effect transistor. We have used techniques such as microlithography and thin films evaporation to prepare the circuit pattern, laser ablation to produce nanotubes, and a self-assembling method to obtain a good placement of nanotubes on the circuit. We have obtained a good connection between contacts by ropes of nanotubes, which enables us to measure the influence of gate electrical field on electrical transport in nanotubes. Using ropes of semiconductor nanotubes we obtain values of transconductance of about 10−4 S. All measurements were taken at room temperature.