Title of article
Status of DEPFET
Author/Authors
Velthuis، نويسنده , , J.J. and Kohrs، نويسنده , , R. and Reuen، نويسنده , , L. and Treis، نويسنده , , J. and Zhang، نويسنده , , C. and Andricek، نويسنده , , L. and Fischer، نويسنده , , P. and Giesen، نويسنده , , F. and Krüger، نويسنده , , H. and Lutz، نويسنده , , G. and Mathes، نويسنده , , M. and Moser، نويسنده , , H.G. and Peric، نويسنده , , I. V. Richter، نويسنده , , R.H. and Sandow، نويسنده , , C. and Strüder، نويسنده , , L. and von Tِrne، نويسنده , , E. and Trimpl، نويسنده , , M. and Wermes، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
57
To page
60
Abstract
In a DEPFET sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, therefore combining the advantages of a fully depleted silicon sensor with in-pixel amplification. Presently, the DEPFET is mainly developed for two different kinds of applications: imaging spectroscopy in X-ray astronomy and the vertex detector for the International Linear Collider (ILC). In X-ray astronomy, the DEPFET sensor is chosen as focal plane detector for the XEUS mission mainly for its low noise and power consumption. In addition, the scalable pixel size makes it suitable for missions like SIMBOL-X, BepiColombo and WIMS. Using the source follower readout mode, a noise of 1.6e− is obtained at room temperature for single pixel devices. Two types of ILC devices, with and without a high energy (HE) implant, were tested in a testbeam. The signal-to-noise ratios were 100 with and 126 without HE implant. The position resolutions for both devices were found to be better than 6 μm.
Keywords
Active pixel sensors , Tracking , CMOS , Solid state detectors
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2006
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2202187
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