Czochralski silicon radiation detectors

An overview is presented of some of the recent results concerning the suitability of Czochralski silicon to High Energy Physics (HEP) radiation detectors. It has been shown that an elevated oxygen concentration within the bulk silicon of detectors offers increased radiation hardness to charged particle radiation. Silicon produced using the Czochralski growth method has an intrinsically higher concentration of oxygen than the standard silicon growth method, float zone, which is extensively used in HEP radiation detectors. The research reviewed in this paper aims to understand the microscopic and macroscopic behaviour of Czochralski and compares the performance to standard silicon radiation detectors. The majority of this work has been performed in the framework of the RD50 collaboration.