Title of article :
Sensor simulation and position calibration for the CMS pixel detector
Author/Authors :
Chiochia، نويسنده , , V. and Alagِz، نويسنده , , E. and Swartz، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
4
From page :
132
To page :
135
Abstract :
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Φ = 5.9 × 10 14 n eq / cm 2 a position resolution below 15 μ m can be achieved after calibration.
Keywords :
Electric field , Radiation hardness , Charge collection , Silicon , CMS , pixel
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2006
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2202210
Link To Document :
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