Author/Authors :
Bulgheroni، نويسنده , , Antonio and Caccia، نويسنده , , Massimo and Domanski، نويسنده , , Krzysztof and Grabiec، نويسنده , , Piotr and Grodner، نويسنده , , Miroslaw and Jaroszewicz، نويسنده , , Bohdan and Klatka، نويسنده , , Tomasz and Kociubinski، نويسنده , , Andrzej and Koziel، نويسنده , , Michal and Kucewicz، نويسنده , , Wojciech and Kucharski، نويسنده , , Krzysztof and Kuta، نويسنده , , Stani، نويسنده ,
Abstract :
The paper concerns the development of a novel monolithic silicon pixel detector, which exploits Silicon on Insulator substrates for the integration of the readout electronics and pixel detector. In the discussed solution, the readout CMOS circuit is manufactured in the thin device layer over the buried oxide while the pixel matrix is created in the high resistive handle wafer of the SOI substrate. Small test matrices of the SOI sensor have been recently manufactured and preliminary tests with an infrared laser light and a radioactive source indicated the sensor sensitivity for the ionizing radiation. The concept and design of the SOI detector together with the preliminary measurement results of the sensor matrices are addressed in the paper.
