Title of article
State of the art on epitaxial GaAs detectors
Author/Authors
Sun، نويسنده , , G.C. and Ma?ez، نويسنده , , N. and Zazoui، نويسنده , , M. and Al-Ajili، نويسنده , , A. and Davidson، نويسنده , , D.W. and O’Shea، نويسنده , , V. and Quarati، نويسنده , , F. and Smith، نويسنده , , K.M. and Chambellan، نويسنده , , D. and Gal، نويسنده , , O. and Pillot، نويسنده , , Ph. and Lenoir، نويسنده , , M. and Montagne، نويسنده , , J.P. and Bchetnia، نويسنده , , A. and Bourgoin، نويسنده , , J.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
8
From page
140
To page
147
Abstract
We first briefly review the performances for X-ray detection which are obtained using thin epitaxial GaAs layers. We then show that good detectors can be realized on thick and large area epitaxial GaAs layers which are now available, making them suitable for X-ray imaging. We finally discuss the main limitation imposed by the epitaxial nature of this new material and ways to overcome it.
Keywords
X-ray detector , GaAs , epitaxy
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2005
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2203696
Link To Document