Title of article
CMOS active pixel sensors for ionising radiation
Author/Authors
Evans، نويسنده , , D.A. and Allport، نويسنده , , P.P. and Casse، نويسنده , , G. and Faruqi، نويسنده , , A.R. and Gallop، نويسنده , , B. and Henderson، نويسنده , , R. and Prydderch، نويسنده , , M. and Turchetta، نويسنده , , R. and Tyndel، نويسنده , , M. and Velthuis، نويسنده , , J. and Villani، نويسنده , , G. and Waltham، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
281
To page
285
Abstract
Monolithic Active Pixel Sensors (MAPS) take advantage of recent developments in deep sub-micron VLSI technology. CMOS sensors now enjoy widespread commercial applications as inexpensive visible light-imaging devices. These are also being utilised and developed for an increasing number of scientific fields due to advantages which include: low power consumption, radiation hardness, small pixel size and on-chip or even in-pixel processing capabilities.
e designed, characterised and evaluated a number of prototype CMOS MAPS devices as position-sensitive detectors for ionising radiation. This development was primarily driven by the requirements of the Linear Collider vertex detector but a broader spectrum of applications, including several outside particle physics, has been explored and some of these are also briefly presented here.
Keywords
Monolithic active pixel sensors , Vertex detector , Linear collider , Electron microscopy
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2005
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2203733
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