Title of article
Fabrication and characterization of thin ΔE detectors for spectroscopic application
Author/Authors
Thungstrِm، نويسنده , , Gِran and Westerberg، نويسنده , , Lars and Spohr، نويسنده , , Reimar and Sture Petersson، نويسنده , , C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
7
From page
312
To page
318
Abstract
Ultra-thin Δ E detectors for spectroscopic applications have been fabricated and characterized down to a thickness of 4.5 μm. A common one-side mask aligner was used to fabricate the detectors. The detectors display low leakage current and the resulting capacitance is close to the detector window capacitance below a threshold voltage. The detector telescope needs to be slightly tilted to reduce the probability for channeling. However, even better control of the thickness uniformity is needed to improve the resolution in the Δ E – E detector telescope.
Keywords
Thin silicon detector , ?E detector , Energy straggling , Ion channeling
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2005
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2203745
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