Title of article
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates
Author/Authors
Batignani، نويسنده , , G. D. Angelini ، نويسنده , , C. and Bisogni، نويسنده , , M.G and Boscardin، نويسنده , , M. and Bettarini، نويسنده , , S. and Bondioli، نويسنده , , M. and Bosisio، نويسنده , , L. and Bucci، نويسنده , , F. and Calderini، نويسنده , , G. and Carpinelli، نويسنده , , M. and Ciacchi، نويسنده , , M. and Dalla Betta، نويسنده , , G.F. and Dittongo، نويسنده , , S. and Forti، نويسنده , , F. and Giorgi، نويسنده , , M.A. and Gregori، نويسنده , , P. and Han، نويسنده , , D.J. and Manfredi، نويسنده , , P.F. and Manghisoni، نويسنده , , M. and Marchiori، نويسنده , , G. G. Neri Serneri، نويسنده , , N. and Novelli، نويسنده , , M. and Paoloni، نويسنده , , E. and Piemonte، نويسنده , , C. and Rachevskaia، نويسنده , , I. and Rama، نويسنده , , M. and Ratti، نويسنده , , L. and Re، نويسنده , , V. and Rizzo، نويسنده , , G. and Ronchin، نويسنده , , S. and Rosso، نويسنده , , V. and Simi، نويسنده , , Jeferson G. and Speziali، نويسنده , , V. and Stefanini، نويسنده , , A. and Zorzi، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
7
From page
98
To page
104
Abstract
We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600–800 μm thick silicon bulk, contacted on the backplane. We have studied the current amplification for two different doping profiles of the emitter, obtaining values of β ranging from 60 to 3000. For various emitter and base configurations, we measured the static device characteristics and extracted the leakage currents and the base resistance, verifying the fundamental relationship between them and the total base capacitances. The use of such phototransistors to detect ionizing particles is exploited and discussed.
Keywords
Particle detectors , Optoelectronics devices , Bipolar junction transistors
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2004
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2203822
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