Title of article :
Radiation hardness of different silicon materials after high-energy electron irradiation
Author/Authors :
Dittongo، نويسنده , , S. and Bosisio، نويسنده , , L. and Ciacchi، نويسنده , , M. and Contarato، نويسنده , , D. and DʹAuria، نويسنده , , G. and Fretwurst، نويسنده , , E. and Lindstrِm، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of 2.1×1015 e/cm2. The variation of the effective dopant concentration, the current related damage constant α and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated.
Keywords :
Electron radiation effects , Radiation hardness , High-resistivity silicon devices
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
