Author/Authors :
Luukka، نويسنده , , P. and Hنrkِnen، نويسنده , , Samuel J. and Tuovinen، نويسنده , , E. and Tuominen، نويسنده , , E. and Lassila-Perini، نويسنده , , K. and Mehtنlن، نويسنده , , P. and Nummela، نويسنده , , S. and Nysten، نويسنده , , J. and Ungaro، نويسنده , , D. and Zibellini، نويسنده , , A. and Laitinen، نويسنده , , P. and Riihimنki، نويسنده , , I. and Virtanen، نويسنده , , A. and Furgeri، نويسنده , , A. and Hartmann، نويسنده , , F.، نويسنده ,
Abstract :
We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
