• Title of article

    DEPFET development at the MPI semiconductor laboratory

  • Author/Authors

    Lutz، نويسنده , , Gerhard، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    9
  • From page
    103
  • To page
    111
  • Abstract
    The DEPFET device concept offers unique properties that make it useful for applications in X-ray astronomy and particle physics as well as in other fields. They form the basis for two major projects of the MPI Semiconductor Laboratory. This survey reviews device concepts, potential, technology and properties of devices produced at the laboratory. A self-aligning double poly double metal technology has been developed and already the first prototype production run has delivered devices with excellent properties (for example, a noise of ENC=2.2 electrons at room temperature). Another new technology allows the production of very thin (50 μm) detectors.
  • Keywords
    DEPFET , Semiconductor detector , Pixel detector , Wafer bonding
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2005
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2203943