Title of article :
DEPFET development at the MPI semiconductor laboratory
Author/Authors :
Lutz، نويسنده , , Gerhard، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
9
From page :
103
To page :
111
Abstract :
The DEPFET device concept offers unique properties that make it useful for applications in X-ray astronomy and particle physics as well as in other fields. They form the basis for two major projects of the MPI Semiconductor Laboratory. This survey reviews device concepts, potential, technology and properties of devices produced at the laboratory. A self-aligning double poly double metal technology has been developed and already the first prototype production run has delivered devices with excellent properties (for example, a noise of ENC=2.2 electrons at room temperature). Another new technology allows the production of very thin (50 μm) detectors.
Keywords :
DEPFET , Semiconductor detector , Pixel detector , Wafer bonding
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2005
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2203943
Link To Document :
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