Title of article
DEPFET development at the MPI semiconductor laboratory
Author/Authors
Lutz، نويسنده , , Gerhard، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
9
From page
103
To page
111
Abstract
The DEPFET device concept offers unique properties that make it useful for applications in X-ray astronomy and particle physics as well as in other fields. They form the basis for two major projects of the MPI Semiconductor Laboratory. This survey reviews device concepts, potential, technology and properties of devices produced at the laboratory. A self-aligning double poly double metal technology has been developed and already the first prototype production run has delivered devices with excellent properties (for example, a noise of ENC=2.2 electrons at room temperature). Another new technology allows the production of very thin (50 μm) detectors.
Keywords
DEPFET , Semiconductor detector , Pixel detector , Wafer bonding
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2005
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2203943
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