Title of article :
Amorphous selenium flat panel detectors for medical applications
Author/Authors :
Zhao، نويسنده , , Wei and Hunt، نويسنده , , D.C. and Tanioka، نويسنده , , Kenkichi and Rowlands، نويسنده , , J.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
205
To page :
209
Abstract :
Different technologies for making X-ray sensitive active matrix flat-panel imagers (AMFPI) are reviewed for applications in digital radiography and fluoroscopy. Aspects of imaging performance requiring improvement are identified and potential new detector concepts addressing these issues are briefly described. The rationale is given for the investigation of a new detector concept—an indirect conversion FPI with avalanche gain—for low-dose X-ray imaging. This detector consists of an amorphous selenium (a-Se) photoconductor optically coupled to a structured cesium iodide (CsI) scintillator. Under an electric field ESe, the a-Se is sensitive to light and converts the optical photons emitted from CsI into electronic signal that can be stored and read out in the same fashion as in existing AMFPI. When ESe is increased to >90 V/μm, avalanche multiplication occurs. The avalanche gain ranges between 1–800 depending on ESe and the thickness of the a-Se layer. The avalanche a-Se photoconductor is referred to as High-gain Avalanche Rushing amorphous Photoconductor. The feasibility of two detector configurations based on avalanche gain, each using a different image readout method, are under investigation. Their advantages are compared to other AMPFI technologies for digital radiography and fluoroscopy.
Keywords :
Flat-panel detectors , Avalanche gain , Indirect detectors , Amorphous selenium
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2005
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2203973
Link To Document :
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