• Title of article

    Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

  • Author/Authors

    Bruzzi، نويسنده , , M. and Bisello، نويسنده , , D. and Borrello، نويسنده , , L. and Borchi، نويسنده , , E. and Boscardin، نويسنده , , M. and Candelori، نويسنده , , A. and Creanza، نويسنده , , D. and Dalla Betta، نويسنده , , G.-F. and DePalma، نويسنده , , M. and Dittongo، نويسنده , , S. and Focardi، نويسنده , , E. and Khomenkov، نويسنده , , V. and Litovchenko، نويسنده , , A. and Macchiolo، نويسنده , , A. La Manna and S. Longhi، نويسنده , , N. and Menichelli، نويسنده , , D. and Messineo، نويسنده , , A. and Miglio، نويسنده , , S. and Petasecca، نويسنده , , M. and Piemonte، نويسنده , , C. and Pignatel، نويسنده , , G.U. and Radicci، نويسنده , , V. and Ronchin، نويسنده , , S. and Scaringella، نويسنده , , M. and Segneri، نويسنده , , G. and Sentenac، نويسنده , , D. and Tosi، نويسنده , , C. and Zorzi، نويسنده , , N.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    7
  • From page
    20
  • To page
    26
  • Abstract
    We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4×1014 cm-2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C–V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 °C and the final passivation oxide was omitted.
  • Keywords
    Defects , Microstrip detectors , Silicon detectors , Radiation damage
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2005
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2204129