Title of article
Characterization of oxygen dimer-enriched silicon detectors
Author/Authors
Boisvert، نويسنده , , Hilary V. and Lindstrِm، نويسنده , , J.L. and Moll، نويسنده , , M. and Murin، نويسنده , , L.I. and Pintilie، نويسنده , , I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
7
From page
49
To page
55
Abstract
Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.
Keywords
Silicon detector , Radiation hardness , Oxygen dimer , electron irradiation , Proton irradiation , FTIR
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2005
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2204133
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