Title of article :
High resistivity CMOS pixel sensors and their application to the STAR PXL detector
Author/Authors :
Dorokhov، نويسنده , , A. and Bertolone، نويسنده , , G. and Baudot، نويسنده , , J. and Colledani، نويسنده , , C. and Claus، نويسنده , , G. and Degerli، نويسنده , , Y. and De Masi، نويسنده , , R. and Deveaux، نويسنده , , M. and Dozière، نويسنده , , G. and Dulinski، نويسنده , , W. and Gelin، نويسنده , , M. and Goffe، نويسنده , , M. and Himmi، نويسنده , , A. and Hu-Guo، نويسنده , , Ch. and Jaaskelainen، نويسنده , , K. and Koziel، نويسنده , , M. an، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
174
To page :
177
Abstract :
CMOS pixel sensors are foreseen to equip the vertex detector (called PXL) of the upgraded inner tracking system of the STAR experiment at RHIC. The sensors (called ULTIMATE) are being designed and their architecture is being optimized for the PXL specifications, extrapolating from the MIMOSA-26 sensor realized for the EUDET beam telescope. per gives an overview of the ULTIMATE sensor specifications and of the adaptation of its forerunner, MIMOSA-26, to the PXL specifications. the main changes between MIMOSA-26 and ULTIMATE is the use of a high resistivity epitaxial layer. Recent performance assessments obtained with MIMOSA-26 sensors manufactured on such an epitaxial layer are presented, as well as results of beam tests obtained with a prototype probing improved versions of the MIMOSA-26 pixel design. They show drastic improvements of the pixel signal-to-noise ratio and of the sensor radiation tolerance with respect to the performances achieved with a standard, i.e. low resistivity, layer.
Keywords :
Radiation hardness , Monolithic active pixel sensor , Tracking
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2011
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2204223
Link To Document :
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