Author/Authors :
Achmadullin، نويسنده , , R.A. and Artemov، نويسنده , , V.V. and Dvoryankin، نويسنده , , V.F. and Dvoryankina، نويسنده , , G.G. and Dikaev، نويسنده , , Yu.M. and Ermakov، نويسنده , , M.G. and Ermakova، نويسنده , , O.N. and Chmil، نويسنده , , V.B. and Holodenko، نويسنده , , A.G. and Kudryashov، نويسنده , , A.A. and Krikunov، نويسنده , , A.I. and Petrov، نويسنده , , A.G. and Telegin، نويسنده , , A.A. and Vorobiev، نويسنده , , A.P.، نويسنده ,
Abstract :
A new type of the photovoltaic X-ray detector based on epitaxial p+–n–n′–n+ GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n+-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I–V and C–V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to α-particles and γ-radiation are measured. The application of X-ray detectors is discussed.
