Author/Authors :
Petrosyan، نويسنده , , A.G. and Derdzyan، نويسنده , , M. and Ovanesyan، نويسنده , , K. and Lecoq، نويسنده , , P. and Auffray، نويسنده , , E. and Trummer، نويسنده , , J. and Kronberger، نويسنده , , M. and Pedrini، نويسنده , , C. and Dujardin، نويسنده , , C. and Anfre، نويسنده , , P.، نويسنده ,
Abstract :
Single crystals of LuAP:Ce and LuYAP(Lu*70%):Ce co-doped with tetravalent (Hf and Zr) and pentavalent (Ta) ions were grown from melts by the Bridgman process. Underlying absorption, slope of the optical edge and transmission in the range of emission were compared to those of LuAP:Ce crystals. Absorption coefficients at 260 nm less than 2 cm−1 have been recorded in LuAP:Ce crystals containing tetravalent ions that are lower than the corresponding figures (5–6 cm−1) measured in undoped LuAP. At high concentrations of added impurities, despite of suppression of the parasitic underlying absorption below 300 nm, the slope of the optical edge and transmission in the range of emission are seriously damaged. Scintillation parameters of crystals with added impurities are compared to those of LuAP:Ce.
Keywords :
Scintillators , bridgman , Luap , Impurities
