Title of article :
Extensive electrical model of large area silicon photomultipliers
Author/Authors :
Condorelli، نويسنده , , G. and Sanfilippo، نويسنده , , D. and Valvo، نويسنده , , G. and Mazzillo، نويسنده , , M. and Bongiovanni، نويسنده , , D. and Piana، نويسنده , , A. and Carbone، نويسنده , , B. and Fallica، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
8
From page :
127
To page :
134
Abstract :
In this paper the full electrical model of silicon photomultipliers fabricated at STMicroelectronics Catania R&D clean room facilities is presented. An accurate investigation on both SiPM single microcell and entire SiPM structure to extrapolate all the electrical elements has been executed by means of dedicated characterizations carried out on appropriate layout structure. The electrical simulations results are compared to the experimental data showing a good fit and therefore verifying the accuracy of the proposed model. This model can be used to describe all the SiPMs with different sizes manufactured using the same technology. Moreover, starting from this extensive electrical model, custom application software was developed in order to predict the possibility to profitably use the SiPM technology for different applications.
Keywords :
Silicon PhotoMultiplier , Geiger Mode Avalanche Diode , electrical model
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2011
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2204893
Link To Document :
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