• Title of article

    Extensive electrical model of large area silicon photomultipliers

  • Author/Authors

    Condorelli، نويسنده , , G. and Sanfilippo، نويسنده , , D. and Valvo، نويسنده , , G. and Mazzillo، نويسنده , , M. and Bongiovanni، نويسنده , , D. and Piana، نويسنده , , A. and Carbone، نويسنده , , B. and Fallica، نويسنده , , G.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    8
  • From page
    127
  • To page
    134
  • Abstract
    In this paper the full electrical model of silicon photomultipliers fabricated at STMicroelectronics Catania R&D clean room facilities is presented. An accurate investigation on both SiPM single microcell and entire SiPM structure to extrapolate all the electrical elements has been executed by means of dedicated characterizations carried out on appropriate layout structure. The electrical simulations results are compared to the experimental data showing a good fit and therefore verifying the accuracy of the proposed model. This model can be used to describe all the SiPMs with different sizes manufactured using the same technology. Moreover, starting from this extensive electrical model, custom application software was developed in order to predict the possibility to profitably use the SiPM technology for different applications.
  • Keywords
    Silicon PhotoMultiplier , Geiger Mode Avalanche Diode , electrical model
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2011
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2204893