Title of article
Characterisation of a pixel sensor in SOI technology for charged particle tracking
Author/Authors
Battaglia، نويسنده , , Marco and Bisello، نويسنده , , Dario and Contarato، نويسنده , , Devis and Denes، نويسنده , , Peter and Giubilato، نويسنده , , Piero and Mattiazzo، نويسنده , , Serena and Pantano، نويسنده , , Devis and Zalusky، نويسنده , , Sarah، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
8
From page
258
To page
265
Abstract
This paper presents the results of the characterisation of a pixel sensor manufactured in 0.2 μ m SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.
Keywords
CMOS technology , Monolithic pixel sensor , SOI , Particle detection
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2011
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2204932
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