Author/Authors :
Bardelli، نويسنده , , L. M. Bini، نويسنده , , M. and Casini، نويسنده , , G. and Edelbruck، نويسنده , , P. and Pasquali، نويسنده , , G. M. Poggi، نويسنده , , G. and Barlini، نويسنده , , S. and Berjillos، نويسنده , , R. and Borderie، نويسنده , , B. and Bougault، نويسنده , , R. and Bruno، نويسنده , , M. and Carboni، نويسنده , , S. and Chbihi، نويسنده , , A. and DʹAgostino، نويسنده , , Judith M. and Dueٌas-Jiménez، نويسنده , , J.A. and Gautier، نويسنده , , J.M، نويسنده ,
Abstract :
In the last few years the FAZIA [1] collaboration has been investigating the properties of silicon detectors – in particular the crystal orientation and resistivity non-uniformity – in order to better pin down the detector characteristics that influence their performances for particle identification using Δ E − E and Pulse Shape Analysis (PSA) techniques. In this paper we present the first particle identification results obtained with detectors selected for good resistivity uniformity and using a “non-channeled” configuration. A new digital electronics was also designed for the R&D phase of FAZIA and was tested under beam for the first time. A quantitative procedure to measure the observed performances is applied in order to quantify the particle identification thresholds. Particle identification thresholds of ∼ 2.5 AMeV for Z ∼ 3 – 10 have been reached with the studied reaction.
Keywords :
Solid state detectors , Pulse shape analysis , digital signal processing , Digital sampling , Crystal orientation effects
