Author/Authors :
Sadrozinski، نويسنده , , H.F.-W. and Betancourt، نويسنده , , C. and Bielecki، نويسنده , , A. and Butko، نويسنده , , Z. and Fadeyev، نويسنده , , V. and Parker، نويسنده , , C. and Ptak، نويسنده , , N. and Wright، نويسنده , , J. and Unno، نويسنده , , Y. and Terada، نويسنده , , S. and Ikegami، نويسنده , , Y. and Kohriki، نويسنده , , T. and Mitsui، نويسنده , , S. and Hara، نويسنده , , K. and Hamasaki، نويسنده , , N. and Takahashi، نويسنده , , Y. an، نويسنده ,
Abstract :
We have tested the effectiveness of punch-through protection (PTP) structures on n-on-p AC-coupled Silicon strip detectors using pulses from an 1064 nm IR laser, which simulate beam accidents. The voltages on the strips are measured as a function of the bias voltage and compared with the results of DC I–V measurements, which are commonly used to characterize the PTP structures. We find that the PTP structures are only effective at very large currents (several mA), and clamp the strips to much larger voltages than assumed from the DC measurements. We also find that the finite resistance of the strip implant compromises the effectiveness of the PTP structures.
Keywords :
Punch-through protection , p-Type , Laser pulses , Silicon strip detectors
