Title of article :
Plasma effect in silicon charge coupled devices (CCDs)
Author/Authors :
Estrada، نويسنده , , J. and Molina، نويسنده , , J. and Blostein، نويسنده , , J.J. and Fernلndez، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
Plasma effect is observed in CCDs exposed to heavy ionizing α - particles with energies in the range 0.5–5.5 MeV. The results obtained for the size of the charge clusters reconstructed on the CCD pixels agree with previous measurements in the high energy region ( ≥ 3.5 MeV ). The measurements were extended to lower energies using α - particles produced by ( n , α ) reactions of neutrons in a 10B target. The effective linear charge density for the plasma column is measured as a function of energy. The results demonstrate the potential for high position resolution in the reconstruction of α particles, which opens an interesting possibility for using these detectors in neutron imaging applications.
Keywords :
CCD silicon detectors , Plasma effect , Neutron imaging
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A