Title of article
Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon
Author/Authors
Macchiolo، نويسنده , , A. and Borrello، نويسنده , , L. and Boscardin، نويسنده , , M. and Bruzzi، نويسنده , , M. and Creanza، نويسنده , , D. and Dalla Betta، نويسنده , , G.-F. and DePalma، نويسنده , , Federico M. and Focardi، نويسنده , , E. and Manna، نويسنده , , N. and Menichelli، نويسنده , , D. and Messineo، نويسنده , , A. and Piemonte، نويسنده , , C. and Radicci، نويسنده , , V. and Ronchin، نويسنده , , S. and Scaringella، نويسنده , , M. and Segneri، نويسنده , , G. and Sentenac، نويسنده , , D. and Zorzi، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
216
To page
219
Abstract
The results of the pre- and post-irradiation characterization of n- and p-type magnetic Czochralski silicon micro-strip sensors are reported. This work has been carried out within the INFN funded SMART project aimed at the development of radiation-hard semiconductor detectors for the luminosity upgrade of the large Hadron collider (LHC). The detectors have been fabricated at ITC-IRST (Trento, Italy) on 4 in wafers and the layout contains 10 mini-sensors. The devices have been irradiated with 24 GeV/c and 26 MeV protons in two different irradiation campaigns up to an equivalent fluence of 3.4×1015 1-MeV n/cm2. The post-irradiation results show an improved radiation hardness of the magnetic Czochralski mini-sensors with respect to the reference float-zone sample.
Keywords
Silicon detectors , Micro-strip detectors , Radiation damage
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2007
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2205559
Link To Document