Optimization of monolithic charged-particle sensor arrays

Direct-detection CMOS image sensors optimized for charged-particle imaging applications, such as electron microscopy and particle physics, have been designed, fabricated and characterized. These devices directly image charged particles without reliance on image-degrading hybrid technologies such as the use of scintillating materials. Based on standard CMOS Active Pixel Sensor (APS) technology, the sensor arrays use an 8–20 μm thick epitaxial layer that acts as a sensitive region for the generation and collection of ionization electrons resulting from impinging high-energy particles. A range of optimizations to this technology have been developed via simulation and experimental device design. These include the simulation and measurement of charge-collection efficiency vs. recombination, effect of diode area and stray capacitance vs. signal gain and noise, and the effect of different epitaxial silicon depths. Several experimental devices and full-scale prototypes are presented, including two prototypes that systematically and independently vary pixel pitch and diode area, and a complete high-resolution camera for electron microscopy optimized through experiment and simulation. The electron microscope camera has 1×1 k2 pixels with a 5 μm pixel pitch and an 8 μm epitaxial silicon thickness.