Author/Authors :
Sadrozinski، نويسنده , , H.F.-W. and Betancourt، نويسنده , , C. and Heffern، نويسنده , , R. and Henderson، نويسنده , , I. and Pixley، نويسنده , , J. and Polyakov، نويسنده , , A. and Wilder، نويسنده , , M. and Boscardin، نويسنده , , M. and Piemonte، نويسنده , , C. and Pozza، نويسنده , , A. and Zorzi، نويسنده , , N. and Dalla Betta، نويسنده , , G.-F. and Resta، نويسنده , , G. and Bruzzi، نويسنده , , M. and Macchiolo، نويسنده , , A. and Borrello، نويسنده , , L. and Messineo، نويسنده , , A. and Creanza، نويسنده , , D. and Manna، نويسنده , , N.، نويسنده ,
Abstract :
Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures (TS) were manufactured on several high-resistivity substrates: p-type Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with 60Co gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and TS are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150 krad and breakdown performance improves considerably after 210 krad. Annealing was performed both at room temperature and at 60 °C, and large effects on the surface parameters observed.
Keywords :
Solid-state detectors , Electrical variable measurements , Semiconductor device characterization , Radiation effects on semiconductors , Position sensitive detectors , Gamma ray effects
