Title of article
Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker
Author/Authors
Chu، نويسنده , , M.L. and Hou، نويسنده , , S. and Huffman، نويسنده , , T. and Issever، نويسنده , , C. and Lee، نويسنده , , S.C. and Lu، نويسنده , , R.S. and Su، نويسنده , , D.S. and Teng، نويسنده , , P.K and Weidberg، نويسنده , , A.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
6
From page
795
To page
800
Abstract
We study the radiation hardness of the Vertical Cavity Surface Emitting Laser diodes (VCSELs) and the epitaxial silicon PIN diodes that will be used for the Atlas SemiConductor Tracker at the CERN Large Hadron Collider. The tests were conducted with 200 MeV protons to a fluence of 4 × 10 14 p / cm 2 and with 20 MeV (average energy) neutrons to 7.7 × 10 14 n / cm 2 . The radiation damage of the VCSELs and PINs and the annealing characteristics are presented.
Keywords
optoelectronic , Radiation hardness , LHC
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2007
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2207183
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