Title of article :
Sub-nanosecond time-of-flight for segmented silicon detectors
Author/Authors :
deSouza، نويسنده , , R.T. and Alexander، نويسنده , , A. and Brown، نويسنده , , K. and Floyd، نويسنده , , B. and Gosser، نويسنده , , Z.Q. and Hudan، نويسنده , , S. and Poehlman، نويسنده , , J. and Rudolph، نويسنده , , M.J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
133
To page :
136
Abstract :
Development of a multichannel time-of-flight system for readout of a segmented, ion-passivated, ion-implanted silicon detector is described. This system provides sub-nanosecond resolution ( δ t ≈ 370 ps ) even for low energy α particles which deposit E ≤ 7.687 MeV in the detector.
Keywords :
Silicon electronics , Fast timing , Time-of-flight , Segmented silicon detectors
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2011
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2208044
Link To Document :
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