Test of a MAPS realized in standard non-epitaxial CMOS technology

An active pixel sensor has been developed using standard CMOS technology, UMC 0.18 μ m with no epitaxial layer, with pixel size 4.4 × 4.4 μ m , in the framework of the INFN RAPS project. In this work we will report on the results obtained using several types of ionizing radiation sources (laser, X-ray tubes, β and γ ) to test extensively the device. Some of the main results obtained are: a signal/noise value for minimum ionizing particles of about 20, a very good linearity of the response, a good spatial confinement of the signal (cluster size of the order of few pixels).