Author/Authors :
Dinu، نويسنده , , N. and Barrillon، نويسنده , , P. and Bazin، نويسنده , , C. and Belcari، نويسنده , , N. and Bisogni، نويسنده , , M.G. and Bondil-Blin، نويسنده , , S. C. Boscardin، نويسنده , , M. and Chaumat، نويسنده , , V. and Collazuol، نويسنده , , G. and De La Taille، نويسنده , , C. and Del Guerra، نويسنده , , A. and Llosل، نويسنده , , G. and Marcatili، نويسنده , , S. and Melchiorri، نويسنده , , M. and Piemonte، نويسنده , , C. and Puill، نويسنده , , V. and Tarolli، نويسنده , , A. and Vagnucci، نويسنده , , J.F. and Zorzi، نويسنده , , N.، نويسنده ,
Abstract :
This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage.
Keywords :
Silicon PhotoMultiplier , matrix , gain , Photon detection efficiency , Dark count rate , Photodetectors
