Title of article :
Radiation hardness of p-type silicon detectors
Author/Authors :
Casse، نويسنده , , Gianluigi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
6
From page :
464
To page :
469
Abstract :
Finely segmented silicon detectors made with n-side readout on p-type substrate have emerged as the most promising choice for the replacement of the tracker systems for the CERN LHC upgrade to higher luminosity. They have practically assumed the status of baseline devices for the silicon microstrip layers of the upgrades, and are now also being considered as possible candidates even for the innermost pixel layers. A review of the reasons for the success of the p-type bulk devices is presented here.
Keywords :
Radiation hardness , Silicon detectors , Tracking , Vertexing , SLHC
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2010
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2209278
Link To Document :
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