Title of article
Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p–i–n structures
Author/Authors
Kostamo، نويسنده , , Pasi and Lankinen، نويسنده , , Aapo and Tuomi، نويسنده , , Turkka O. and Sنynنtjoki، نويسنده , , Antti and Lipsanen، نويسنده , , Harri and Zhilyaev، نويسنده , , Yuri V. Fedorov، نويسنده , , Leonid and Orlova، نويسنده , , Tatiana، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
192
To page
195
Abstract
Results from synchrotron X-ray topography and electrical characterization of thick epitaxial GaAs p–i–n structures suitable for manufacturing of radiation detectors are reported. The structures under study have been grown with hydride vapor phase epitaxy method. A comprehensive set of large-area transmission, large-area back-reflection and transmission section topographs are analyzed. The X-ray topography results are compared with the dark current density of the detector diodes. The X-ray topographs show the defect structure in the samples and provide important information for epitaxial process optimization.
Keywords
X-ray topography , p–i–n diode , Epitaxial GaAs
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2008
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2209669
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