Title of article
Radiation damage in p-type silicon irradiated with neutrons and protons
Author/Authors
Cindro، نويسنده , , Vladimir and Kramberger، نويسنده , , Gregor and Lozano، نويسنده , , Manuel and Mandi?، نويسنده , , Igor and Miku?، نويسنده , , Marko and Pellegrini، نويسنده , , Giulio and Pulko، نويسنده , , Jo?ef and Ullan، نويسنده , , Miguel and Zavrtanik، نويسنده , , Marko، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
6
From page
60
To page
65
Abstract
Diodes fabricated on high resistivity standard, oxygenated and magnetic Czochralski p-type materials were irradiated with reactor neutrons and 24 GeV/c protons up to an equivalent fluence of Φeq=3×1014 cm−2. Radiation effects on effective trapping times, effective dopant concentration and leakage current were measured at 20 °C. Annealing of defects was performed at 20 and 60 °C.
Keywords
Silicon detector damage trapping proton neutrons
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2009
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2210662
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