• Title of article

    Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

  • Author/Authors

    DU، نويسنده , , Xinkang and Wang، نويسنده , , Tian-min and WANG، نويسنده , , Cong and CHEN، نويسنده , , Bu-liang and ZHOU، نويسنده , , Long، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    140
  • To page
    144
  • Abstract
    Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from −50 °C to 600 °C. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase components, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure, δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate temperature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases. Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to −50 °C, and a remarkable augmentation of transmittance could be noticed under so low a temperature.
  • Keywords
    Reactive magnetron sputtering , NbN thin film , Optical properties , microstructure
  • Journal title
    Chinese Journal of Aeronautics
  • Serial Year
    2007
  • Journal title
    Chinese Journal of Aeronautics
  • Record number

    2264627