Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V semiconductor interfaces

Ohmic metallizations on semiconductors such as In0.53Ga0.47As and GaAs have been analyzed by cross-sectional transmission electron microscopy. To obtain a lattice image of multilayer structures in the high-resolution mode, a cross-sectional specimen preparation procedure was developed. The phase formation after thermal treatment of the ohmic contacts has been studied by applying different microanalytical techniques. The results have been utilized for improving the metallurgical stability and the electrical properties of the contacts.