Title of article
Preparation, Transmission Electron Microscopy, and Microanalytical Investigations of Metal-III-V Semiconductor Interfaces
Author/Authors
Klein، نويسنده , , A. and Urban، نويسنده , , I. and Ressel، نويسنده , , P. and Nebauer، نويسنده , , Sarah E. and Merkel، نويسنده , , U. and ضsterle، نويسنده , , W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
9
From page
697
To page
705
Abstract
Ohmic metallizations on semiconductors such as In0.53Ga0.47As and GaAs have been analyzed by cross-sectional transmission electron microscopy. To obtain a lattice image of multilayer structures in the high-resolution mode, a cross-sectional specimen preparation procedure was developed. The phase formation after thermal treatment of the ohmic contacts has been studied by applying different microanalytical techniques. The results have been utilized for improving the metallurgical stability and the electrical properties of the contacts.
Journal title
Materials Characterization
Serial Year
1997
Journal title
Materials Characterization
Record number
2270347
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