Electrodeposition and characterization of HgSe thin films

In this article we present the results on the electrochemical synthesis of mercury selenide (HgSe), an interesting II–VI material. HgSe thin films were deposited potentiostatically on conducting glass substrates from an aqueous bath containing HgCl2 and SeO2. The prepared films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), scanning electron microscope (SEM) and optical absorption techniques. Stoichiometric polycrystalline HgSe films were obtained at a deposition potential around − 0.7 V vs SCE, at a temperature 60 °C and a pH value of 3.5. The as-grown films exhibited a direct optical band gap of 0.78 eV. This report deals with the growth mechanism and a study related to the influence of electrolyte bath composition, deposition potential, temperature and pH on the properties of HgSe thin films.