Optimization, design and fabrication of a non-cryogenic quantum infrared detector

A study of the optimization of the detectivity of a mid infrared double heterostructure photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and give physical insight on the mechanisms dominating the dark current. The analysis is performed step by step, from a simple p–n junction to the full double heterostructure. The influence of temperature, barrier band gap energy in a double heterostructure, doping density in the active region, on diffusion and generation–recombination mechanisms is analyzed. It is shown how the performances of a double heterostructure photovoltaic detector can be improved by a controlled doping the active region. Nevertheless, its development is still limited by the difficulties occurring during device processing. For example, the use of dry etching for the processing of InAs0.91Sb0.09 p–i–n photovoltaic detectors induces a strong leakage current along the mesa edge. In this letter, we show an improvement of the R0A characteristic by several orders of magnitude at low temperature by using an Ion Beam Etching (IBE) followed by a wet chemical etching. This optimized and reliable device processing allows us to demonstrate that the detector performance is actually limited by the diffusion current of holes. Finally, we discuss the ability of an n-type barrier made of InAs/AlSb super-lattice to avoid hole diffusion and to improve the R0A characteristic of these detectors. To cite this article: B. Vinter et al., C. R. Physique 4 (2003).