Title of article :
Spin dependent transport: GMR & TMR
Author/Authors :
Schuhl، نويسنده , , Alain and Lacour، نويسنده , , Daniel، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
11
From page :
945
To page :
955
Abstract :
The discovery of giant magnetoresistance in 1988 opened the large research field of ‘spintronics’. Twenty years later, a large number of devices makes use of the electronʹs spin, in addition to its charge, to control electronic transport properties. The physical origin of spintronic phenomena is the different conduction properties of the majority and minority spin electrons in a ferromagnetic metal. At an interface involving a ferromagnetic conductor, this leads to spin dependent conduction or tunneling properties. Here we present an overview of magnetotransport phenomena in structures involving metallic layers. To cite this article: A. Schuhl, D. Lacour, C. R. Physique 6 (2005).
Keywords :
GMR , GMR , magnetoresistance , TMR , TMR , Spin dependent transport , Magnétorésistance , Transport dépendant du spin
Journal title :
Comptes Rendus Physique
Serial Year :
2005
Journal title :
Comptes Rendus Physique
Record number :
2283597
Link To Document :
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