Title of article
Relaxation plastique dʹun film mince par émission de dislocations filantes vis
Author/Authors
Bonnet، نويسنده , , Roland and Youssef، نويسنده , , Sami and Neily، نويسنده , , Salem and Gutakowskii، نويسنده , , A.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
7
From page
276
To page
282
Abstract
The system formed by a thin film coherent with a crystalline substrate can relax its internal energy by annealing. Threading dislocations emitted after ten minutes annealing at 350 °C of the Si0.68Ge0.32/Si(001) heterostructure are observed in transmission electron microscopy, and then identified by comparison to simulated images of angular dislocations placed in a semi infinite medium. They are of screw character, which explains the rapid coverage of the interface by 60° dislocations oriented 〈110〉. To cite this article: R. Bonnet et al., C. R. Physique 9 (2008).
Keywords
Thin film , Dislocations , Dislocations , Transmission electron microscopy , Film mince , Microscopie électronique à transmission
Journal title
Comptes Rendus Physique
Serial Year
2008
Journal title
Comptes Rendus Physique
Record number
2283959
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