Title of article :
Fractional quantum Hall physics in topological flat bands
Author/Authors :
Parameswaran، نويسنده , , Siddharth A. and Roy، نويسنده , , Rahul and Sondhi، نويسنده , , Shivaji L.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
24
From page :
816
To page :
839
Abstract :
We present a pedagogical review of the physics of fractional Chern insulators with a particular focus on the connection to the fractional quantum Hall effect. While the latter conventionally arises in semiconductor heterostructures at low temperatures and in high magnetic fields, interacting Chern insulators at fractional band filling may host phases with the same topological properties, but stabilized at the lattice scale, potentially leading to high-temperature topological order. We discuss the construction of topological flat band models, provide a survey of numerical results, and establish the connection between the Chern band and the continuum Landau problem. We then briefly summarize various aspects of Chern band physics that have no natural continuum analogs, before turning to a discussion of possible experimental realizations. We close with a survey of future directions and open problems, as well as a discussion of extensions of these ideas to higher dimensions and to other topological phases.
Keywords :
fractional quantum Hall effect , Flat bands , Chern insulators , Topological order , Isolants de Chern , Bandes plates , Effet Hall fractionnaire , Ordre topologique
Journal title :
Comptes Rendus Physique
Serial Year :
2013
Journal title :
Comptes Rendus Physique
Record number :
2284563
Link To Document :
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