Title of article :
Augmented Gaussian basis sets for the elements K, Sc–Kr, Rb, and Y–Xe: Application in HF, MP2, and DFT calculations of molecular electric properties
Author/Authors :
Martins، نويسنده , , L.S.C. and de Souza، نويسنده , , F.A.L. and Ceolin، نويسنده , , G.A. and Jorge، نويسنده , , F.E. and de Berrêdo، نويسنده , , R.C. and Campos، نويسنده , , C.T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
8
From page :
62
To page :
69
Abstract :
Augmented Gaussian basis sets of triple and quadruple zeta valence qualities plus polarization functions for the atoms K, from Sc to Kr, Rb, and from Y to Xe are presented. They were constructed from the all-electron unaugmented sets by addition of diffuse functions (s, p, d, f, g, and h symmetries) that were optimized for the anion ground states. From these sets, Hartree–Fock, second-order Mϕller–Plesset perturbation theory, and density functional theory electric dipole moment and polarizabilities for a sample of molecules as well as for Cun and Agn (n ⩽ 4) clusters were calculated and compared with theoretical and experimental values available in the literature.
Keywords :
K , HF , MP2 , Rb , electric properties , ATZP and AQZP basis sets , Sc–Kr , and Y–Xe elements , and DFT calculations
Journal title :
Computational and Theoretical Chemistry
Serial Year :
2013
Journal title :
Computational and Theoretical Chemistry
Record number :
2286255
Link To Document :
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