Application of SiC-based power element to high current AC/DC converter system

It is proposed that SiC-based power-MOSFET is applied to the high current AC/DC converter system. The possibility of using SiC-based power-MOSFET depends on operational loss reduction and circuit configuration simplification of the high current AC/DC converter system. Concerning the operational loss reduction, the lower on-state resistance of SiC-based power-MOSFET can decrease the conduction loss of switching unit, and it means that the temperature rise of switching unit in operation period is lowered. Therefore, the auxiliary cooling equipment for AC/DC converter will be minimized. The higher operational temperature of SiC-based power-MOSFET will allow also the cooling capacity minimization. As many parallel connected power-MOSFET elements are required for high current operation, the parallel connected elements should be cooled down to liquid nitrogen temperature for on-state resistance reduction.