Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication

In this paper we report an analytical modeling of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS™ and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS™ from SILVACO® international. The photodetector exhibits a high quantum efficiency ∼90%, responsivity ∼1.152–1.2 A/W in the same order as reported experimentally by others, specific detectivity ∼5 × 109 cm Hz1/2 W−1at wavelength 1.55–1.65 μm, dark current of the order of 10−11 A at reverse bias of 1.5 V and 10−13–10−12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5 × 10−14 W.