Characterization of photodiodes, made from a p-type epitaxial layer grown on n-type InSb <1 1 1> by LPE method

In this article the performance of photodiodes made from epitaxially grown layers of p-InSb on n-type InSb substrates is reported. The effect of increasing Cd atomic weight percent on p-type carrier concentration and mobility at 77 K is also discussed. In our epitaxial growth method, a ramp cooling technique was used. Finally by improving growth parameters such as growth temperature, prior cleaning of B face (Sb) n-InSb substrates and cooling rate, adequate epitaxial layers of p-InSb on n-InSb <1 1 1> and consequently highly sensitive photodiodes have been obtained. detectivity photodiodes fabricated for p-InSb on n-InSb substrate by liquid phase epitaxy (LPE) was measured using optoelectronic tests and the detectivity of the diodes was compared with n-InSb on p-InSb. Several other tests such as Hall effect, thickness measurements, I–V and X-ray diffraction (XRD) were also performed and morphology images will be presented in this paper.