Title of article
The low frequency behaviour in high frequency capacitance–voltage characteristics due to contribution of band-to-band tunnelling and generation–recombination in Hg0.75Cd0.25Te MIS capacitors
Author/Authors
Bhan، نويسنده , , R.K. and Saxena، نويسنده , , Raghvendra Sahai and Saini، نويسنده , , N.K. and Sareen، نويسنده , , L. and Pal، نويسنده , , R. and Sharma، نويسنده , , R.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
3
From page
379
To page
381
Abstract
Hg1−xCdxTe Metal–Insulator–Semiconductor (MIS) capacitors were studied both experimentally and theoretically to investigate the capacitance contributions due to band-to-band (btb) tunnelling and generation–recombination (gr) of carriers to inversion layer capacitance. A good fit to the data has been obtained by including the btb contributions rather than gr contributions.
Keywords
HgCdTe , passivation , Capacitance–voltage , Band-to-Band Tunnelling , Generation–recombination
Journal title
Infrared Physics & Technology
Serial Year
2011
Journal title
Infrared Physics & Technology
Record number
2375978
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