Title of article
Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation
Author/Authors
Plis، نويسنده , , E.A. and Kutty، نويسنده , , M.N. and Myers، نويسنده , , S. K. Rathi and K. V. B. R. Tilak ، نويسنده , , A. and Aifer، نويسنده , , E.H. and Vurgaftman، نويسنده , , I. and Krishna، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
216
To page
219
Abstract
We report on effective sulfur-based passivation treatments of type-II InAs/GaSb strained layer superlattice detectors (100% cut-off wavelength is 9.8 μm at 77 K). The electrical behavior of detectors passivated by electrochemical sulfur deposition (ECP) and thioacetamide (TAM) was evaluated for devices of various sizes. ECP passivated detectors with a perimeter-to-area ratio of 1600 cm−1 exhibited superior performance with surface resistivity in excess of 104 Ω cm, dark current density of 2.7 × 10−3 A/cm2, and specific detectivity improved by a factor of 5 compared to unpassivated devices (VBias = − 0.1 V, 77 K).
Keywords
InAs/GaSb , passivation , LWIR detector , superlattices , Sulfidization
Journal title
Infrared Physics & Technology
Serial Year
2012
Journal title
Infrared Physics & Technology
Record number
2376059
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