Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

Dilute nitride InAsN epitaxial layers were produced using both liquid phase and molecular beam epitaxial growth techniques. The spectral features in the photoluminescence of samples containing up to 1% N with emission energies in the mid-infrared spectral region are described and compared. The emission intensities of both LPE and MBE grown materials were found to be comparable. Increasing the N content in the InAsN alloys resulted in a significant increase in the activation energy for thermal quenching of the photoluminescence emission due to a combination of lowering of the conduction band edge and Auger de-tuning.