Title of article :
InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy
Author/Authors :
Yin، نويسنده , , M. and Krier، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
InSb has been grown by liquid phase epitaxy using indium rich solutions with a supercooling of 2–5 °C onto (1 1 1) oriented Cd0.955Zn0.045Te substrates at 400–405 °C. The resulting epitaxial layers were extensively characterized using X-ray diffraction, optical microscopy, Raman spectroscopy and photoluminescence.
Keywords :
InSb , CdZnTe/CdTe , Raman spectroscopy , liquid phase epitaxy
Journal title :
Infrared Physics & Technology
Journal title :
Infrared Physics & Technology
